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Datasheet SI1407DL Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SI1407DL | P-Channel 1.8-V (G-S) MOSFET Si1407DL
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.130 @ VGS = –4.5 V –12 12 0.170 @ VGS = –2.5 V 0.225 @ VGS = –1.8 V
ID (A)
–1.8 –1.5 –1.3
SOT-363 SC-70 (6-LEADS)
D 1 6 D Marking Code OC XX YY Lot Traceab |  Vishay Siliconix | mosfet |
SI1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SI1000 | (SI Series) SNAP-IN MOUNT ALUMINUM ELECTROLYTIC SNAP–IN MOUNT ALUMINUM ELECTROLYTIC
SI SERIES
SUBMINIATURE (SI: Snap–in)
The SI Snap–in series subminiature aluminum electrolytic capacitors are especially suitable for applications requiring high capacitance, low cost, and very small size. In fact, you’ll find these capacitors in some of th  NTE Electronics data | | |
| 2 | SI1002R | N-Channel 30V (D-S) MOSFET www.vishay.com
N-Channel 30 V (D-S) MOSFET
Si1002R
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) (Ω) MAX. 0.560 at VGS = 4.5 V 0.620 at VGS = 2.5 V 0.700 at VGS = 1.8 V 1.100 at VGS = 1.5 V
SC-75A
D 3
ID (A) 0.5 0.2 0.2 0.05
Qg (TYP.) 0.72 nC
1 G Top View
2 S
Marking Code: L
Orderin  Vishay mosfet | | |
| 3 | SI1010 | Ultra Low Power ADC Si1010/1/2/3/4/5
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; retains state and RAM contents over full supply range; fast wakeup of < 2 µs Less than 600 nA with RTC  Silicon Laboratories data | | |
| 4 | SI1011 | Ultra Low Power ADC Si1010/1/2/3/4/5
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; retains state and RAM contents over full supply range; fast wakeup of < 2 µs Less than 600 nA with RTC Silicon Laboratories data | | |
| 5 | SI1012 | Ultra Low Power ADC Si1010/1/2/3/4/5
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; retains state and RAM contents over full supply range; fast wakeup of < 2 µs Less than 600 nA with RTC Silicon Laboratories data | | |
| 6 | SI1012CR | N-Channel 20 V (D-S) MOSFET www.DataSheet.co.kr
Si1012CR
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 20 0.456 at VGS = 2.5 V 0.546 at VGS = 1.8 V ID (A) 0.5 0.2 0.2 0.75 Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Pow Vishay Siliconix mosfet | | |
| 7 | SI1012R | N-Channel 1.8-V (G-S) MOSFET Si1012R/X
New Product
Vishay Siliconix
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V
ID (mA)
600 500 350
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Spee Vishay Siliconix mosfet | |
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