No | Part number | Description ( Function ) | Manufacturers | |
79 | SGL-0163 | 800-1000 MHZ LOW NOISE AMPLIFIER 50 OHM SILICON GERMANIUM Product Description Stanford Microdevices SGL-0163 is a high performance cascadeable 50-ohm low noise amplifier designed for operation at voltages as low as 2.5V. The SGL-0163 can be operated at 3V for low power or 4V for medium power applications. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters wit |
ETC |
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78 | SGL-0163Z | Cascadable Low Noise Amplifier Product Description The SGL-0163 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5 V. The SGL-0163 has been characterized at Vd = 3 V for low power and 4 V for medium power applications. Only 2 DC-b |
Sirenza Microdevices |
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77 | SGL-0363Z | Low Noise Amplifier Silicon Germanium Preliminary SGL-0363Z Product Description Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier. It is designed for 2.7 to 3.3V battery operation. The matching networks are implemented externally which allows for optimum narrow-band performance with 20dB typical gain and 1.1dB noise figure from 200-900MHz. This RFIC uses the latest Silicon Germanium HBT process |
Sirenza Microdevices |
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76 | SGL-06SMT2 | Low Noise Amplifier SGL-06SMT2 Low Noise Amplifier 5MHz to 4000MHz RFMD’s SGL-06SMT2 is a low noise, high gain MMIC LNA designed for low power, single supply operation from 2.7V to 3.6V. It’s Class-1C ESD protection ensures rugged performance, while its integrated active bias circuit provides stable gain over temperature. SGL-06SMT2 is internally matched from 5MHz to 4000MHz and requires minim |
RF Micro Devices |
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75 | SGL0163Z | high performance SiGe HBT MMIC amplifier SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier SGL0163Z 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier featuring one-micron emitters with FT up to 50GHz. This device has an internal temperature compensation circuit permi |
RF Micro Devices |
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74 | SGL0263Z | high performance SiGe HBT MMIC amplifier SGL0263Z 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier SGL0263Z 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description The SGL0263Z is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50GHz. This device has an internal temperature compensation circuit permi |
RF Micro Devices |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |