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SGL PDF Datasheet

The SGL is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
79 SGL-0163
800-1000 MHZ LOW NOISE AMPLIFIER 50 OHM SILICON GERMANIUM

Product Description Stanford Microdevices’ SGL-0163 is a high performance cascadeable 50-ohm low noise amplifier designed for operation at voltages as low as 2.5V. The SGL-0163 can be operated at 3V for low power or 4V for medium power applications. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters wit

ETC
ETC
pdf
78 SGL-0163Z
Cascadable Low Noise Amplifier

Product Description The SGL-0163 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5 V. The SGL-0163 has been characterized at Vd = 3 V for low power and 4 V for medium power applications. Only 2 DC-b

Sirenza Microdevices
Sirenza Microdevices
pdf
77 SGL-0363Z
Low Noise Amplifier Silicon Germanium

Preliminary SGL-0363Z Product Description Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier. It is designed for 2.7 to 3.3V battery operation. The matching networks are implemented externally which allows for optimum narrow-band performance with 20dB typical gain and 1.1dB noise figure from 200-900MHz. This RFIC uses the latest Silicon Germanium HBT process

Sirenza Microdevices
Sirenza Microdevices
pdf
76 SGL-06SMT2
Low Noise Amplifier

SGL-06SMT2 Low Noise Amplifier 5MHz to 4000MHz RFMD’s SGL-06SMT2 is a low noise, high gain MMIC LNA designed for low power, single supply operation from 2.7V to 3.6V. It’s Class-1C ESD protection ensures rugged performance, while its integrated active bias circuit provides stable gain over temperature. SGL-06SMT2 is internally matched from 5MHz to 4000MHz and requires minim

RF Micro Devices
RF Micro Devices
pdf
75 SGL0163Z
high performance SiGe HBT MMIC amplifier

SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier SGL0163Z 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier featuring one-micron emitters with FT up to 50GHz. This device has an internal temperature compensation circuit permi

RF Micro Devices
RF Micro Devices
pdf
74 SGL0263Z
high performance SiGe HBT MMIC amplifier

SGL0263Z 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier SGL0263Z 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description The SGL0263Z is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50GHz. This device has an internal temperature compensation circuit permi

RF Micro Devices
RF Micro Devices
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List of most widely used semiconductors

Part Number Function Manufacturers PDF
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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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