No | Part number | Description ( Function ) | Manufacturers | |
3 | S34ML01G1 | 3V SLC NAND Flash Distinctive Characteristics Density – 1 Gb/ 2 Gb / 4 Gb Architecture – Input / Output Bus Width: 8-bits / 16-bits – Page size: – x8 = 2112 (2048 + 64) bytes; 64 bytes is spare area – x16 = 1056 (1024 + 32) words; 32 words is spare area – Block size: 64 Pages – x8 = 128 KB + 4 KB – x16 = 64k + 2k words – Plane size: – 1 Gb / 2 Gb: 1024 Blocks per Plan |
Cypress Semiconductor |
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2 | S34ML01G1 | (S34ML01G1 - S34ML04G1) SLC NAND Flash Memory Spansion® SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 1-bit ECC, x8 and x16 I/O, 3V VCC S34ML01G1, S34ML02G1, S34ML04G1 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be des |
Spansion |
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1 | S34ML01G2 | NAND Flash Memory S34ML01G2 S34ML02G2 S34ML04G2 1 Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC NAND Flash Memory for Embedded Distinctive Characteristics Density – 1 Gb / 2 Gb / 4 Gb Architecture – Input / Output Bus Width: 8 bits / 16 bits – Page size: – ×8: 1 Gb: (2048 + 64) bytes; 64-byte spare area 2 Gb / 4 Gb: (2048 + 128) bytes; 128-byte spare area – ×16: 1 Gb: (1024 + 32) wor |
Cypress Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |