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RJP63K2DPP-M0 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 RJP63K2DPP-M0
N-Channel IGBT

Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated package TO-220FL R07DS0468EJ0200 Rev.2.00 Ju

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RJP63K2DPP- Data sheets

Part No Description ( Function) Manufacturers PDF
RJP63K2DPP-M0   N-Channel IGBT

Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 2

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