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RJP63G4 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 RJP63F3DPP-M0
N-Channel IGBT

Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.2.00 May 26, 2011 Outline RENE

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2 RJP63K2DPK-M0
N-Channel IGBT

Preliminary Datasheet RJP63K2DPK-M0 Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max R07DS0469EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Pa

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1 RJP63K2DPP-M0
N-Channel IGBT

Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak current: ICES = 1 A max Isolated package TO-220FL R07DS0468EJ0200 Rev.2.00 Ju

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