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RJP63F3 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 RJP63F3DPP-M0
N-Channel IGBT

Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.2.00 May 26, 2011 Outline RENE

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RJP63F3DPP- Data sheets

Part No Description ( Function) Manufacturers PDF
RJP63F3DPP-M0   N-Channel IGBT

Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak cu

Renesas
Renesas
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