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RJP6065DPM PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 RJP6065DPM
N-Channel IGBT

Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Outline RENESAS Package code: PRSS0003ZA-A (Package name:

Renesas
Renesas
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RJP6065D Data sheets

Part No Description ( Function) Manufacturers PDF
RJP6065DPM   N-Channel IGBT

Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bondi

Renesas
Renesas
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