No | Part number | Description ( Function ) | Manufacturers | |
74 | RJP020N06 | Drive Nch MOS FET RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 zApplications Switching zPackaging specifications Package Type RJP020N06 Code Ba |
ROHM Semiconductor |
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73 | RJP020N06FRA | Power MOSFET ( Transistor ) RJP020N06FRA Nch 60V 2A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 60V 240mΩ ±2A 2W lFeatures 1) Low on-resistance 2) Low voltage drive(2.5V drive) 3) AEC-Q101 Qualified lOutline SOT-89 MPT3 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width |
ROHM Semiconductor |
|
72 | RJP1CS03DWA | IGBT ( Insulated Gate Bipolar Transistor ) Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev.0.01 Jul 03, 2012 Outline Die: RJP1CS03DWT-80 2 C 3 1G 1 Wafer: RJP1CS03DWA-8 |
Renesas |
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71 | RJP1CS03DWT | IGBT ( Insulated Gate Bipolar Transistor ) Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev.0.01 Jul 03, 2012 Outline Die: RJP1CS03DWT-80 2 C 3 1G 1 Wafer: RJP1CS03DWA-8 |
Renesas |
|
70 | RJP1CS04DWA | IGBT ( Insulated Gate Bipolar Transistor ) Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0827EJ0004 Rev.0.04 Jun 05, 2012 Outline Die: RJP1CS04DWT-80 2 C 3 1G 1 Wafer: RJP1CS04DWA- |
Renesas |
|
69 | RJP1CS04DWT | IGBT ( Insulated Gate Bipolar Transistor ) Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) High speed switching Short circuit withstands time (10 s min.) R07DS0827EJ0004 Rev.0.04 Jun 05, 2012 Outline Die: RJP1CS04DWT-80 2 C 3 1G 1 Wafer: RJP1CS04DWA- |
Renesas |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |