pdf datasheet site - dataSheet39.com


RJP4584 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
74 RJP020N06
Drive Nch MOS FET

RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 zApplications Switching zPackaging specifications Package Type RJP020N06 Code Ba

Rohm
Rohm
pdf
73 RJP020N06FRA
Power MOSFET

RJP020N06FRA   Nch 60V 2A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD 60V 240mΩ ±2A 2W lFeatures 1) Low on-resistance 2) Low voltage drive(2.5V drive) 3) AEC-Q101 Qualified lOutline SOT-89 MPT3            lInner circuit    Datasheet   lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width

ROHM
ROHM
pdf
72 RJP1CS03DWA
IGBT

Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev.0.01 Jul 03, 2012 Outline Die: RJP1CS03DWT-80 2 C 3 1G 1 Wafer: RJP1CS03DWA-8

Renesas
Renesas
pdf
71 RJP1CS03DWT
IGBT

Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev.0.01 Jul 03, 2012 Outline Die: RJP1CS03DWT-80 2 C 3 1G 1 Wafer: RJP1CS03DWA-8

Renesas
Renesas
pdf
70 RJP1CS04DWA
IGBT

Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0827EJ0004 Rev.0.04 Jun 05, 2012 Outline Die: RJP1CS04DWT-80 2 C 3 1G 1 Wafer: RJP1CS04DWA-

Renesas
Renesas
pdf
69 RJP1CS04DWT
IGBT

Preliminary Datasheet RJP1CS04DWT/RJP1CS04DWA 1250V - 50A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C)  High speed switching  Short circuit withstands time (10 s min.) R07DS0827EJ0004 Rev.0.04 Jun 05, 2012 Outline Die: RJP1CS04DWT-80 2 C 3 1G 1 Wafer: RJP1CS04DWA-

Renesas
Renesas
pdf



Share Link

[1] [2] [3] [4] [5] [6] [7] >>>.....[13] 

DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.

Sitemap Link

Index : 1N  2SC  74H  AD  BC  IRF  LM  TD  New  Sitemap  RJP


DataSheet39.com    |   2019    |  Privacy Policy  |  Contact Us