RJP30H2DPK-M0 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | RJP30H2DPK-M0 | N-Channel Power MOSFET Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Pa |
 Renesas |
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The datasheet is usually used for technical communication to describe technical characteristics of an item or product. |
RJP30H2DPK- Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| RJP30H2DPK-M0 | N-Channel Power MOSFET Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 |
Renesas |
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