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RJP30H1DPD PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 RJP30H1DPD
N-Channel Power MOSFET

Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Pa

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RJP30H1D Data sheets

Part No Description ( Function) Manufacturers PDF
RJP30H1DPD   N-Channel Power MOSFET

Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V

Renesas
Renesas
datasheet pdf
RJP30H1DPP-M0   N-Channel Power MOSFET

Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)=

Renesas
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datasheet pdf



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