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Datasheet RJP30H1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | RJP30H1DPD | N-Channel Power MOSFET / Transistor Preliminary Datasheet
RJP30H1DPD
Silicon N Channel IGBT High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak curre |
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| 1 | RJP30H1DPP-M0 | N-Channel Power MOSFET / Transistor Preliminary Datasheet
RJP30H1DPP-M0
Silicon N Channel IGBT High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak |
Renesas |
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