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RJP30E2DPK-M0 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 RJP30E2DPK-M0
N-Channel Power MOSFET

Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name:

Renesas
Renesas
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RJP30E2DPK- Data sheets

Part No Description ( Function) Manufacturers PDF
RJP30E2DPK-M0   N-Channel Power MOSFET

Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA

Renesas
Renesas
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