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Datasheet RJP30E2 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | RJP30E2DPK-M0 | N-Channel Power MOSFET / Transistor Preliminary Datasheet
RJP30E2DPK-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0348EJ0100 |
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1 | RJP30E2DPP-M0 | N-Channel Power MOSFET / Transistor Preliminary Datasheet
RJP30E2DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated pac |
Renesas |
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Número de pieza | Descripción | Fabricantes | |
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