No | Part number | Description ( Function ) | Manufacturers | |
1 | RJP3053DPP | IGBT ( Insulated Gate Bipolar Transistor ) April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching PDP System PDP trends Scan IC Power device High breakdown voltage Low resistance High speed switching Wide MOSFET line-ups High Speed IGBT Y Sustain circuit Panel X Sustain circuit High Intensity High |
Renesas Technology |
0  1  2  3  4  5  6  7  8 9 |
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2N3053 | MEDIUM POWER SILICON NPN PLANAR TRANSISTOR 2N3053 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • VCEO = 40V 5.08 (0.200) ty |
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