No | Part number | Description ( Function ) | Manufacturers | |
1 | RJP2557DPK | IGBT ( Insulated Gate Bipolar Transistor ) April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching PDP System PDP trends Scan IC Power device High breakdown voltage Low resistance High speed switching Wide MOSFET line-ups High Speed IGBT Y Sustain circuit Panel X Sustain circuit High Intensity High |
Renesas Technology |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to RJP2557DPK |
Part No | Description ( Function) | Manufacturers | |
2557 | PROTECTEDQUADLOW-SIDEDRIVERWITHFAULTDETECTION&SLEEPMODE 2557 A2557xLB OUT1 K OUT2 GROUND GROUND OUT3 FAULT OUT4 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 IN 1 IN2 ENABLE GROUND GROUND V CC IN 3 IN 4 PROTECTED QUAD LOW-SIDE DRIVER WITH FAULT DETECTION & SLEEP MODE The A2557xB, A2557xEB, and A2557xLB have been specifically designed to pro |
AllegroMicroSystems |
|
2557 | PROTECTED QUAD LOW-SIDE DRIVER Data Sheet 29317.16E 2557 PROTECTED QUAD LOW-SIDE DRIVER WITH FAULT DETECTION & SLEEP MODE A2557xLB OUT1 1 K2 OUT2 3 GROUND 4 GROUND 5 OUT3 6 FAULT 7 OUT4 8 16 IN1 15 IN2 14 ENABLE 13 GROUND 12 GROUND 11 V CC 10 IN 3 9 IN 4 Dwg. PP-017-4 Note that the A2557xB (DIP) and the |
Allegro |
|
2N2557 | PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 2N1038, 2N1039*. ?N1040- 2N1041* 2N2552, 2N2553*, 2N2554, 2N2555* 2N2556,, 2N2557*, 2N2558, 2N2559* TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 A B C PNP GERMANIUM ALLOY JUNCTION POWER These hermetically sealed a |
New Jersey Semi-Conductor |
|
2N2557 | Trans GP BJT NPN 20V 3-Pin TO-18 Box |
New Jersey Semiconductor |
|
2SD2557 | Silicon NPN Triple Diffused Planar Transistor(Series Regulator and General Purpose) Equivalent circuit C Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2557 200 200 6 5 2 70(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD2557 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Condition |
Sanken electric |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |