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RJP2557DPK PDF Datasheet

The RJP2557DPK is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RJP2557DPK
IGBT ( Insulated Gate Bipolar Transistor )

April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching PDP System PDP trends Scan IC Power device High breakdown voltage Low resistance High speed switching Wide MOSFET line-ups High Speed IGBT Y Sustain circuit Panel X Sustain circuit High Intensity High

Renesas Technology
Renesas Technology
pdf

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Recommended search results related to RJP2557DPK

Part No Description ( Function) Manufacturers PDF
2557   PROTECTEDQUADLOW-SIDEDRIVERWITHFAULTDETECTION&SLEEPMODE

2557 A2557xLB OUT1 K OUT2 GROUND GROUND OUT3 FAULT OUT4 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 IN 1 IN2 ENABLE GROUND GROUND V CC IN 3 IN 4 PROTECTED QUAD LOW-SIDE DRIVER WITH FAULT DETECTION & SLEEP MODE The A2557xB, A2557xEB, and A2557xLB have been specifically designed to pro

AllegroMicroSystems
AllegroMicroSystems
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2557   PROTECTED QUAD LOW-SIDE DRIVER

Data Sheet 29317.16E 2557 PROTECTED QUAD LOW-SIDE DRIVER WITH FAULT DETECTION & SLEEP MODE A2557xLB OUT1 1 K2 OUT2 3 GROUND 4 GROUND 5 OUT3 6 FAULT 7 OUT4 8 16 IN1 15 IN2 14 ENABLE 13 GROUND 12 GROUND 11 V CC 10 IN 3 9 IN 4 Dwg. PP-017-4 Note that the A2557xB (DIP) and the

Allegro
Allegro
datasheet pdf
2N2557   PNP GERMANIUM ALLOY JUNCTION POWER TRANSISTORS

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 2N1038, 2N1039*. ?N1040- 2N1041* 2N2552, 2N2553*, 2N2554, 2N2555* 2N2556,, 2N2557*, 2N2558, 2N2559* TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 A B C PNP GERMANIUM ALLOY JUNCTION POWER These hermetically sealed a

New Jersey Semi-Conductor
New Jersey Semi-Conductor
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2N2557   Trans GP BJT NPN 20V 3-Pin TO-18 Box

New Jersey Semiconductor
New Jersey Semiconductor
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2SD2557   Silicon NPN Triple Diffused Planar Transistor(Series Regulator and General Purpose)

Equivalent circuit C Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2557 200 200 6 5 2 70(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SD2557 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Condition

Sanken electric
Sanken electric
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[1]    

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