No | Part number | Description ( Function ) | Manufacturers | |
307 | RJK005N03 | Drive Nch MOS FET RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) SMT3 2.9 1.1 0.4 (3) zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive). 0.8 (2) (1) 1.6 2.8 0.95 0.95 0.15 1.9 zApplications Switching zPackaging specifications and hFE Package Type RJK005N03 Code Basic orderin |
ROHM Semiconductor |
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306 | RJK005N03FRA | Nch 30V 500mA Small Signal MOSFET RJK005N03FRA Nch 30V 500mA Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 30V 580mΩ ±500mA 200mW lFeatures 1) Low on-resistance 2) Ultra low voltage drive (2.5V drive) 3) AEC-Q101 Qualified lOutline SOT-346 SC-59 SMT3 lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Embossed Tape Reel size (mm |
ROHM Semiconductor |
|
305 | RJK0204DPA | Silicon N Channel Power MOS FET Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outli |
Renesas Technology |
|
304 | RJK0206DPA | Silicon N Channel Power MOS FET Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outli |
Renesas Technology |
|
303 | RJK0208DPA | Silicon N Channel Power MOS FET Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free Outli |
Renesas Technology |
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302 | RJK0210DPA | Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet RJK0210DPA Silicon N Channel Power MOS FET Power Switching Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1948-0021 Rev.0.21 Jul 02, 2010 Outline RENESAS Package code: PWSN0008DC-A (Packa |
Renesas Technology |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |