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RJH60F5DPQ PDF Datasheet

The RJH60F5DPQ is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RJH60F5DPQ-A0
High Speed Power Switching

Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 �

Renesas
Renesas
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RJH60F5BDPQ-A0   High Speed Power Switching

Preliminary Datasheet RJH60F5BDPQ-A0 600V - 40A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer te

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RJH60F5DPK   Silicon N Channel IGBT

RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode Preliminary REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3

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