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RJH30H2DPK-M0 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 RJH30H2DPK-M0
High Speed Power Switching

Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fast Recovery Diode: VF = 1.4 V typ , trr =

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RJH30H2DPK- Data sheets

Part No Description ( Function) Manufacturers PDF
RJH30H2DPK-M0   High Speed Power Switching

Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf =

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