RJH3077 PDF Datasheet Search Results |
No | Part number | Description ( Function ) | Manufacturers | |
3 | RJH3047 | Silicon N-Channel IGBT High Speed Power Switching http:// |
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2 | RJH30H1DPP-M0 | High Speed Power Switching Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in Fast Recovery Diode: VF = 1.4 V typ., t |
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1 | RJH30H2DPK-M0 | High Speed Power Switching Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = |
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