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RJH3047 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 RJH3047
Silicon N-Channel IGBT High Speed Power Switching

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RJH30 Data sheets

Part No Description ( Function) Manufacturers PDF
RJH30H1DPP-M0   High Speed Power Switching

Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features       Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sa

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datasheet pdf
RJH30H2DPK-M0   High Speed Power Switching

Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf =

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