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RJH3044 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 RJH3047
Silicon N-Channel IGBT High Speed Power Switching

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ETC
ETC
pdf
2 RJH30H1DPP-M0
High Speed Power Switching

Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features       Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in Fast Recovery Diode: VF = 1.4 V typ., t

Renesas
Renesas
pdf
1 RJH30H2DPK-M0
High Speed Power Switching

Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fast Recovery Diode: VF = 1.4 V typ , trr =

Renesas
Renesas
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