Datasheet RJH30 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
3	RJH3047	Silicon N-Channel IGBT High Speed Power Switching http://	ETC
2	RJH30H1DPP-M0	High Speed Power Switching Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features       Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low l	Renesas
1	RJH30H2DPK-M0	High Speed Power Switching Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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