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No Part number Description ( Function ) Manufacturers PDF
85 RJH1BF6RDPQ-80
High Speed Power Switching

Preliminary Datasheet RJH1BF6RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Tj = 25°C) • Gate to emitter voltage rating

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84 RJH1BF7RDPQ-80
High Speed Power Switching

Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25°C) • Gate to emitter voltage rating ±

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83 RJH1CD5DPQ-A0
High Speed Power Switching

Preliminary Datasheet RJH1CD5DPQ-A0 1200 V - 15 A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (trr = 100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching

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82 RJH1CD5DPQ-E0
IGBT

Preliminary Datasheet RJH1CD5DPQ-E0 1200V - 20A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 200 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf

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81 RJH1CD6DPQ-A0
IGBT

Preliminary Datasheet RJH1CD6DPQ-A0 1200 V - 20 A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (trr = 100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching

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80 RJH1CD6DPQ-E0
IGBT

Preliminary Datasheet RJH1CD6DPQ-E0 1200V - 25A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 200 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf

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