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Datasheet R1L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 96 | R1LP0108E | 1Mb Advanced LPSRAM (128k word x 8bit) R1LP0108E Series
1Mb Advanced LPSRAM (128k word x 8bit)
R10DS0029EJ0200 Rev.2.00 2011.01.14
Description
The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E S |
 Renesas Technology |
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| 95 | R1LP0408C | Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) R1200 THRU R2000
HIGH VOLTAGE SILICON RECTIFIER Reverse Voltage - 1200 to 2000 Volts Forward Current - 0.2 to 0.5 Ampere
Features
Low cost Low leakage Low forward voltage drop High current capability
Mechanical Data
Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: MIL-STD-202 method |
 Hitachi Semiconductor |
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| 94 | R1LP0408C | Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) R1200 THRU R2000
HIGH VOLTAGE SILICON RECTIFIER Reverse Voltage - 1200 to 2000 Volts Forward Current - 0.2 to 0.5 Ampere
Features
Low cost Low leakage Low forward voltage drop High current capability
Mechanical Data
Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: MIL-STD-202 method |
Hitachi Semiconductor |
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| 93 | R1LP0408CSB-5SC | 4M SRAM R1LP0408C-C Series
4 M SRAM (512-kword × 8-bit)
REJ03C0077-0100Z Rev. 1.00 Aug.01.2003
Description
The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology |
 Renesas |
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