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PZT2907A PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
12 PZT2907A
Suface Mount Si-Epitaxial Planar Switching Transistors

PZT2907 / PZT2907A PZT2907 / PZT2907A PNP Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage Version 2006-05-09 6.5±0.2 3±0.1 4 1.65 Power dissipation Verlustleistung Plastic case Kunststoffgehäuse Type Code 1 0.7 2.3 23 3.25 ±0.37 3.5±0.2 Weight approx. Gewicht ca. Plastic material has UL c

Diotec
Diotec
pdf
11 PZT2907A
SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT

Motorola  Inc
Motorola Inc
pdf
10 PZT2907A
Silicon Planar Medium Power Transistor

Elektronische Bauelemente PZT2907A PNP Silicon Silicon Planar Medium Power Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION  The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications. SOT-223 MARKING Collector 2907A   = Date code Base BCE Emitte

SeCoS
SeCoS
pdf
9 PZT2907A
PNP Transistors

SMD Type Transistors PNP Transistors PZT2907A (KZT2907A) ■ Features ● Epitaxial planar die construction ● Complementary to PZT2222A SOT-223 6.50±0.2 3.00±0.1 4 7.0±0.3 3.50±0.2 123 10 Unit:mm 1.80 (max) 0.02 ~ 0.1 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter

Kexin
Kexin
pdf
8 PZT2907A
PNP Transistor

RoHS PZT2907A PZT2907A TRANSISTOR (PNP) SOT-223 FEATURES DPower dissipation TPCM: 1 W (Tamb=25℃) Collector current .,LICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V OOperating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter Collect

WEJ
WEJ
pdf
7 PZT2907A
PNP switching transistor

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT2907A PNP switching transistor Product specification Supersedes data of 1997 Jun 02 1999 Apr 14 Philips Semiconductors Product specification PNP switching transistor FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION PNP swit

NXP
NXP
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