No | Part number | Description ( Function ) | Manufacturers | |
3 | PSMN3R0-30YL | N-channel TrenchMOS logic level FET PSMN3R0-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. |
NXP Semiconductors |
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2 | PSMN3R0-30YL | MOSFET ( Transistor ) LF PA K PSMN3R0-30YL N-channel 30 V 3 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Fe |
NXP Semiconductors |
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1 | PSMN3R0-30YLD | N-channel MOSFET LF PSMN3R0-30YLD 18 February 2014 PA K 56 N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usu |
NXP Semiconductors |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |