|
|
Datasheet PJSRV05-4 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJSRV05-4 | Low Capacitance TVS and Diode Array PJSRV05-4
Low Capacitance TVS and Diode Array
This diode array is configured to protect up to four data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. Addi |  Pan Jit International | diode |
PJS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJS6400 | N-Channel Enhancement Mode MOSFET PPJS6400
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V
Current
6.4A
Features
RDS(ON) , VGS@10V, [email protected]<37mΩ RDS(ON) , [email protected], [email protected]<43mΩ RDS(ON) , [email protected], [email protected]<59mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, Pan Jit International mosfet | | |
| 2 | PJS6401 | P-Channel Enhancement Mode MOSFET PPJS6401
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-4.6A
Features
RDS(ON) , VGS@-10V, [email protected]<71mΩ RDS(ON) , [email protected], [email protected]<81mΩ RDS(ON) , [email protected], [email protected]<110mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Appl Pan Jit International mosfet | | |
| 3 | PJS6404 | N-Channel Enhancement Mode MOSFET PPJS6404
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V Current
6.8A
Features
RDS(ON) , VGS@10V, [email protected]<32mΩ RDS(ON) , [email protected],[email protected]<47mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc.. Lead free in compliance with EU Pan Jit International mosfet | | |
| 4 | PJS6405 | P-Channel Enhancement Mode MOSFET PPJS6405
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-4.6A
Features
RDS(ON) , VGS@-10V, [email protected]<72mΩ RDS(ON) , [email protected], [email protected]<96mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance w Pan Jit International mosfet | | |
| 5 | PJS6414 | 20V N-Channel Enhancement Mode MOSFET PPJS6414
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
6.6A
Features
RDS(ON) , [email protected], [email protected]<36mΩ RDS(ON) , [email protected], [email protected]<52mΩ RDS(ON) , [email protected], [email protected]<92mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application Pan Jit International mosfet | | |
| 6 | PJS6415AE | P-Channel Enhancement Mode MOSFET PPJS6415AE
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-4.9A
SOT-23 6L-1
Features
RDS(ON) , VGS@-10V, [email protected]<60mΩ RDS(ON) , [email protected], [email protected]<70mΩ RDS(ON) , [email protected], [email protected]<96mΩ Advanced Trench Process Technology Specially De Pan Jit International mosfet | | |
| 7 | PJS6416 | 20V N-Channel Enhancement Mode MOSFET PPJS6416
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
7.4A
Features
RDS(ON) , [email protected], [email protected]<27mΩ RDS(ON) , [email protected], [email protected]<41mΩ RDS(ON) , [email protected], [email protected]<85mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application Pan Jit International mosfet | |
| Esta página es del resultado de búsqueda del PJSRV05-4. Si pulsa el resultado de búsqueda de PJSRV05-4 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |