No | Part number | Description ( Function ) | Manufacturers | |
1 | PHE13003AU | Silicon Diffused Power Transistor Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEs |
NXP Semiconductors |
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Recommended search results related to PHE13003AU |
Part No | Description ( Function) | Manufacturers | |
PHE13003 | Silicon Diffused Power Transistor Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applic |
NXP Semiconductors |
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PHE13003A | NPN power transistor PHE13003A NPN power transistor Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits Fast switc |
NXP Semiconductors |
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PHE13003C | NPN power transistor TO-92 PHE13003C NPN power transistor 7 October 2013 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits • Fast switching • High typical DC current |
NXP Semiconductors |
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13003 | NPN Epitaxial Silicon Transistor 13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=1500mW Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C |
Elite Enterprises |
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13003 | HIGH VOLTAGE AND HIGH SPEED SWITCH 13003 STANDARD · · 65 HSiN 13003 PEFORMANCE CURVES 1 Ic(A) SOA (DC) 120 100 % Pc Tj 0.1 80 IS/B 60 Ptot 0.01 40 20 0.001 1 hFE 10 100 Vce(V) 0 1000 0 50 100 150 Tj( ) 200 hFE - Ic 100 100 hFE hFE - Ic Tj=125 Tj=25 Tj=125 Tj=25 10 Tj= − 40 |
HSiN |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |