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96 PHD101NQ03LT   N-channel TrenchMOS logic level FET

DPAK PHD101NQ03LT N-channel TrenchMOS logic level FET Rev. 5 — 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualif
NXP Semiconductors
NXP Semiconductors
datasheet PHD101NQ03LT pdf
95 PHD108NQ03LT   N-channel TrenchMOS logic level FET

PHD108NQ03LT N-channel TrenchMOS logic level FET Rev. 04 — 5 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for u
NXP Semiconductors
NXP Semiconductors
datasheet PHD108NQ03LT pdf
94 PHD10N10E   PowerMOS transistor

Philips Semiconductors Product Specification PowerMOS transistor PHD10N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suuitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, weld
NXP Semiconductors
NXP Semiconductors
datasheet PHD10N10E pdf
93 PHD110NQ03LT   N-channel TrenchMOS logic level FET

PHD110NQ03LT N-channel TrenchMOS™ logic level FET Rev. 01 — 16 June 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold s
NXP Semiconductors
NXP Semiconductors
datasheet PHD110NQ03LT pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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