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PHCT203 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
5 PHC20306
Complementary enhancement mode MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET PHC20306 Complementary enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification Complementary enhancement mode MOS transistor FEATURES • Very low on-state resistance • High-speed switching • No secondary breakdown. APPLICATIONS •

NXP
NXP
pdf
4 PHC20512
Complementary enhancement mode MOS transistors

DISCRETE SEMICONDUCTORS DATA SHEET PHC20512 Complementary enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Oct 22 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors FEATURES • High-speed switching • No secondary breakdown • Very low on-state

NXP
NXP
pdf
3 PHC21025
Complementary intermediate level FET

SO8 PHC21025 Complementary intermediate level FET Rev. 04 — 17 March 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications

NXP
NXP
pdf
2 PHC21025
Complementary enhancement mode MOS transistors

DISCRETE SEMICONDUCTORS DATA SHEET PHC21025 Complementary enhancement mode MOS transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Complementary enhancement mode MOS transistors Product specification PHC21025 FEATURES • High-speed switching • No secondary breakdown • Very l

Philips
Philips
pdf
1 PHC2300
Complementary enhancement mode MOS transistors

DISCRETE SEMICONDUCTORS DATA SHEET PHC2300 Complementary enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Oct 24 Philips Semiconductors Product specification Complementary enhancement mode MOS transistors FEATURES • High-speed switching • No secondary breakdown. APPLICATIONS • Unive

NXP
NXP
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