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Datasheet PFF Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | PFF13N50 | 500V N-Channel MOSFET Feb 2009
PFP13N50/PFF13N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 28 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.46 Ω (Typ.) |
 Power Device |
 |
| 4 | PFF18N50 | 500V N-Channel MOSFET Feb 2009
PFP18N50/PFF18N50
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 48.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.26 Ω (Typ. |
Power Device |
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| 3 | PFF2N60 | N-Channel MOSFET Pyramis Corporation
“The Silicon System Solutions Company” Applications: •Adaptor •Charger •SMPS Standby Power •LCD Panel Power Features: • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves Ordering Information
PART NUMBER PFB2N6 |
 Pyramis Corporation |
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| 2 | PFF4N60 | N-Channel MOSFET Pyramis Corporation
“The Silicon System Solutions Company” Applications: • Adaptor • Charger • SMPS Standby Power • LCD Panel Power Features: • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves
PFB4N60/PFF4N60
PRELIMINARY
N-Cha |
 Pyramis |
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