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Datasheet PF6 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PF60 | Diode, Rectifier |  American Microsemiconductor | diode |
| 2 | PF608N | Diode, Rectifier | American Microsemiconductor | diode |
| 3 | PF608N | Diode, Rectifier DIODE MODULE 60A/800V
FEATURES
* Cathode & Anode Common * 3 Phase Half Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
PE PF
PE608N
PF608N
OUTLINE DRAWING
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage *1 Non R |  ETC | diode |
| 4 | PF610BC | N-Channel Enhancement Mode MOSFET PF610BC
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
0.7Ω @VGS = 10V
ID 1.1A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous |  UNIKC | mosfet |
| 5 | PF610BL | N-Channel Enhancement Mode MOSFET PF610BL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
0.7Ω @VGS = 10V
ID 0.9A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Cu | UNIKC | mosfet |
PF6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PF60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | PF608N | Diode, Rectifier American Microsemiconductor diode | | |
| 3 | PF608N | Diode, Rectifier DIODE MODULE 60A/800V
FEATURES
* Cathode & Anode Common * 3 Phase Half Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
PE PF
PE608N
PF608N
OUTLINE DRAWING
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage *1 Non R ETC diode | | |
| 4 | PF610BC | N-Channel Enhancement Mode MOSFET PF610BC
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
0.7Ω @VGS = 10V
ID 1.1A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous UNIKC mosfet | | |
| 5 | PF610BL | N-Channel Enhancement Mode MOSFET PF610BL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
0.7Ω @VGS = 10V
ID 0.9A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Cu UNIKC mosfet | | |
| 6 | PF610HV | Dual N-Channel Enhancement Mode MOSFET PF610HV
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
0.7Ω @VGS = 10V
ID 1A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuou UNIKC mosfet | | |
| 7 | PF6HZ | 4 Amp High Reliability Soft Glass Passivated Silicon Diodes DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPPD-400-1B
FEATURES
MECHANICAL SPECIFICATION
R
PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE VOID FREE VACUUM DIE SOLDERING  Diotec Electronics diode | |
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