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Datasheet PBSS533PAS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | PBSS5320D | PNP transistor DISCRETE SEMICONDUCTORS
DATA SHEET
age
MBD128
PBSS5320D 20 V low VCEsat PNP transistor
Product specification 2002 Jun 12
Philips Semiconductors
Product specification
20 V low VCEsat PNP transistor
FEATURES • Low collector-emitter saturation voltage • High current capability • Improved |
 NXP Semiconductors |
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| 13 | PBSS5320T | PNP transistor DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5320T 20 V, 3 A PNP low VCEsat (BISS) transistor
Product specification Supersedes data of 2002 Aug 08 2004 Jan 15
Philips Semiconductors
Product specification
20 V, 3 A PNP low VCEsat (BISS) transistor
FEATURES • Low collector-emitter saturation voltag |
NXP Semiconductors |
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| 12 | PBSS5320X | PNP transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PBSS5320X 20 V, 3 A PNP low VCEsat (BISS) transistor
Product specification Supersedes data of 2003 Nov 27 2004 Nov 04
Philips Semiconductors
Product specification
20 V, 3 A PNP low VCEsat (BISS) transistor
FEATURES • SOT89 (SC-62) pa |
NXP Semiconductors |
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| 11 | PBSS5330PA | 3A PNP low VCEsat (BISS) transistor HUSON3
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
7 April 2015
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power ca |
NXP Semiconductors |
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