No | Part number | Description ( Function ) | Manufacturers | |
180 | PBSS2515 | 15 V low VCEsat NPN double transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCEsat NPN double transistor Product specification Supersedes data of 2001 Sep 13 2001 Nov 07 Philips Semiconductors Product specification 15 V low VCEsat NPN double transistor FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight |
NXP Semiconductors |
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179 | PBSS2515E | 0.5A NPN low VCEsat (BISS) transistor PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 01 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBSS3515E. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collec |
NXP Semiconductors |
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178 | PBSS2515F | low VCEsat NPN transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F 15 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jan 26 2001 Sep 21 Philips Semiconductors Product specification 15 V low VCEsat NPN transistor FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved thermal behaviour due to flat |
NXP Semiconductors |
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177 | PBSS2515VS | 15 V low VCEsat NPN double transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCEsat NPN double transistor Product specification Supersedes data of 2001 Sep 13 2001 Nov 07 Philips Semiconductors Product specification 15 V low VCEsat NPN double transistor FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight |
NXP Semiconductors |
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176 | PBSS2515YPN | low VCE(sat) NPN/PNP transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PBSS2515YPN 15 V low VCE(sat) NPN/PNP transistor Product specification Supersedes data of 2002 May 08 2005 Jan 11 Philips Semiconductors Product specification 15 V low VCE(sat) NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Replaces two |
NXP Semiconductors |
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175 | PBSS2540E | 500 mA NPN low VCEsat (BISS) transistor PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor Rev. 01 — 4 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBS3540E. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector |
NXP Semiconductors |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |