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PBS PDF Datasheet

The PBS is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
180 PBSS2515
15 V low VCEsat NPN double transistor

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCEsat NPN double transistor Product specification Supersedes data of 2001 Sep 13 2001 Nov 07 Philips Semiconductors Product specification 15 V low VCEsat NPN double transistor FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight

NXP Semiconductors
NXP Semiconductors
pdf
179 PBSS2515E
0.5A NPN low VCEsat (BISS) transistor

PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 01 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBSS3515E. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collec

NXP Semiconductors
NXP Semiconductors
pdf
178 PBSS2515F
low VCEsat NPN transistor

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F 15 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jan 26 2001 Sep 21 Philips Semiconductors Product specification 15 V low VCEsat NPN transistor FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved thermal behaviour due to flat

NXP Semiconductors
NXP Semiconductors
pdf
177 PBSS2515VS
15 V low VCEsat NPN double transistor

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCEsat NPN double transistor Product specification Supersedes data of 2001 Sep 13 2001 Nov 07 Philips Semiconductors Product specification 15 V low VCEsat NPN double transistor FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight

NXP Semiconductors
NXP Semiconductors
pdf
176 PBSS2515YPN
low VCE(sat) NPN/PNP transistor

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PBSS2515YPN 15 V low VCE(sat) NPN/PNP transistor Product specification Supersedes data of 2002 May 08 2005 Jan 11 Philips Semiconductors Product specification 15 V low VCE(sat) NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Replaces two

NXP Semiconductors
NXP Semiconductors
pdf
175 PBSS2540E
500 mA NPN low VCEsat (BISS) transistor

PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor Rev. 01 — 4 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBS3540E. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector

NXP Semiconductors
NXP Semiconductors
pdf

[1]     [2]     [3]     [4]     [5]     [6]     [7]     >>>.....[30] 

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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