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Datasheet P9N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | P9N70 | SSFP9N70 SSFP9N70
StarMOST Power MOSFET
■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in
Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
Description
StarMOS is a new generation of |
 Good-Ark |
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| 12 | P9NB50FP | STP9NB50FP
N-CHANNEL 500V - 0.75 Ω - 8.6 A TO-220/TO-220FP PowerMesh™ MOSFET
TYPE STP9NB50 STP9NB50FP
s s s s s
STP9NB50 STP9NB50FP
VDSS 500 V 500 V
RDS(on) < 0.85 Ω < 0.85 Ω
ID 8.6 A 4.9 A
TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY L |
 STMicroelectronics |
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| 11 | P9NB60FP | STP9NB60FP ®
STP9NB60 STP9NB60FP
N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH™ MOSFET
TYPE ST P9NB60 ST P9NB60FP
s s s s s
V DSS 600 V 600 V
R DS(on) < 0.8 Ω < 0.8 Ω
ID 9.0 A 9.0 A
TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACIT |
 ST Microelectronics |
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| 10 | P9NC60 | STP9NC60 N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP PowerMesh™II MOSFET
TYPE STP9NC60 STP9NC60FP
s s s s s
STP9NC60 STP9NC60FP
VDSS 600 V 600 V
RDS(on) < 0.75 Ω < 0.75 Ω
ID 9.0 A 9.0 A (*)
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW H |
ST Microelectronics |
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