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Datasheet P7NK80ZFP Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | P7NK80ZFP | STP7NK80ZFP STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z
N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH™ Power MOSFET
Features
Type
VDSS (@Tjmax)
STP7NK80Z STP7NK80ZFP
STB7NK80Z STB7NK80Z-1
800V 800V 800V 800V
RDS(on)
< 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω
ID
5.2A | STMicroelectronics | data |
P7N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | P7N06 | MTP7N06
www.Da Motorola Semiconductor data | | |
2 | P7N60B | HGTP7N60B
HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3
Data Sheet January 2000 File Number 4412.2
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These Intersil Corporation data | | |
3 | P7N80 | FQP7N80
QFET
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5
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Fairchild Semiconductor data | | |
4 | P7N80C | FQP7N80C FQP7N80C/FQPF7N80C
QFET
FQP7N80C/FQPF7N80C
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-sta Fairchild Semiconductor data | | |
5 | P7NA40 | STP7NA40
STP7NA40 STP7NA40FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP7NA40 STP7NA40FI
s s s s s s s
V DSS 400 V 400 V
R DS( on) < 1Ω < 1Ω
ID 6.5 A 4.1 A
TYPICAL RDS(on) = 0.82 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANC ST Microelectronics data | | |
6 | P7NA60FI | STP7NA60FI STP7NA60 STP7NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE
ST P 7NA 60 ST P 7NA 60 F I
VDSS
600 V 600 V
R DS( on)
<1Ω <1Ω
ID
7.2 A 4.4 A
s TYPICAL RDS(on) = 0.92 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC
s LO STMicroelectronics data | | |
7 | P7NB60 | STP7NB60FP
STP7NB60 STP7NB60FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
TYPE STP7NB60 STP7NB60F P
s s s s s
V DSS 600 V 600 V
R DS(on) < 1.2 Ω < 1.2 Ω
ID 7.2 A 4.1 A
TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITAN ST Microelectronics data | |
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Número de pieza | Descripción | Fabricantes | |
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