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Datasheet P6N60FI Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 P6N60FI   STP6N60FI

( DataSheet : ) STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI s s s s s VDSS 600 V R DS(on) < 1.2 Ω ID 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLI
 ST Microelectronics
ST Microelectronics		 datasheet P6N60FI pdf

P6N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P6N60FI

STP6N60FI

( DataSheet : ) STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI s s s s s VDSS 600 V R DS(on) < 1.2 Ω ID 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
P6N60

FQP6N60

DataSheet.in FQP6N60 April 2000 QFET FQP6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tai
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor


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 Sanken
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