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Datasheet P5N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 22 | P5N50 | IXTP5N50P
Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode
IXTA 5N50P IXTP 5N50P IXTY 5N50P
VDSS = 500 V = 4.8 A ID25 RDS(on) ≤ 1.4 Ω
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 150°C TJ = 25 |
 IXYS Corporation |
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| 21 | P5N50C | 5 Ampere 500 Volt N-Channel MOSFET P5N50C
®
Pb Free Plating Product
P5N50C
5 Ampere 500 Volt N-Channel MOSFET
{
̻
Pb
Features
̰ ̰ ̰ ̰ ̰
RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
ඔ
2. Drain
BVDSS = 500V
̵
1. Gate
{
RDS(ON) = 1.5 ohm I |
 Thinki Semiconductor |
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| 20 | P5N60FI | STP5N60FI Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
Free Datasheet http://
|
 STMicroelectronics |
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| 19 | P5N80 | FQP5N80 FQP5N80
FQP5N80
800V N-Channel MOSFET
September 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state |
 Fairchild Semiconductor |
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