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P5N PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
22 P5N50
IXTP5N50P

Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTA 5N50P IXTP 5N50P IXTY 5N50P VDSS = 500 V = 4.8 A ID25 RDS(on) ≤ 1.4 Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse wid

IXYS Corporation
IXYS Corporation
pdf
21 P5N50C
5 Ampere 500 Volt N-Channel MOSFET

P5N50C ® Pb Free Plating Product P5N50C 5 Ampere 500 Volt N-Channel MOSFET { ̻ Pb Features ̰ ̰ ̰ ̰ ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested ඔ 2. Drain BVDSS = 500V ̵ 1. Gate { RDS(ON) = 1.5 ohm ID = 5.0A ̻ ̻ { 3. Source General Description This N-channel enhancement mo

Thinki Semiconductor
Thinki Semiconductor
pdf
20 P5N60FI
STP5N60FI

Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http:// Free Datasheet http://

STMicroelectronics
STMicroelectronics
pdf
19 P5N80
FQP5N80

FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pu

Fairchild Semiconductor
Fairchild Semiconductor
pdf
18 P5NA60FI
STP5NA60FI

STP5NA60 STP5NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA60 STP5NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 1.6 Ω < 1.6 Ω ID 5.3 A 3.4 A TYPICAL RDS(on) = 1.35 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPR

STMicroelectronics
STMicroelectronics
pdf
17 P5NA80
STP5NA80

( DataSheet : ) STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA80 STP5NA80FI VDSS 800 V 800 V RDS(on) < 2.4 Ω < 2.4 Ω ID 4.7 A 2.8 A s TYPICAL RDS(on) = 1.8 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZ

STMicroelectronics
STMicroelectronics
pdf



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