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P4N60 PDF Datasheet

The P4N60 is Ssp4n60. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 P4N60

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum R

Fairchild Semiconductor
Fairchild Semiconductor

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Recommended search results related to P4N60

Part No Description ( Function) Manufacturers PDF
ANP4N60B   N-Chanel Power MOSFET

N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications      SMPS PFC Features Low Qg Low Rdson RoHS compliant 1 Gate 2 Drain 3 Source Table 1. Device summary Part numbers ANA4N60B ANP4

datasheet pdf
DFP4N60   N-Channel MOSFET

DFP4N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { ◀ 2. Drain BVDSS = 600V ● ▲ ● ● RDS(ON

datasheet pdf
FCP4N60   N-Channel MOSFET

FCP4N60 600V N-Channel MOSFET FCP4N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 1.0Ω • Ultra low gate charge (typ. Qg = 12.8nC) • Low effective output capacitance (typ. Coss.eff = 32pF) • 100% avalanche tested SuperFET Description SuperFETTM

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf
FQP4N60   600V N-Channel MOSFET

FQP4N60 April 2000 QFET FQP4N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minim

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf
FQP4N60C   N-Channel MOSFET

4A, 600V, N沟道 场效应晶体管 产品参数规格书 工业型号 FQP4N60C FQPF4N60C 公司型号 H4N60P H4N60F 通俗命名 4N60 H HAOHAI 封装标识 P: TO-220AB F: TO-220FP 包装方式 条管装 盒装箱装 每管数量 50Pcs 4N60 Series N-Channel MOSFET 每

datasheet pdf


List of most widely used semiconductors

Part Number Function Manufacturers PDF

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  

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