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Datasheet P4N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
19 | P4N05L | RFP4N05L RFP4N05L, RFP4N06L
Data Sheet
July 1999
File Number
2876.2
4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regula |
Intersil Corporation |
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18 | P4N60 | SSP4N60
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.)
SSP4N60AS
BVDSS = 600 V RDS(on) |
Fairchild Semiconductor |
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17 | P4N80E | MTP4N80E
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performa |
Motorola Semiconductors |
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16 | P4NA40F1 | STP4NA40F1 STP4NA40 STP4NA40FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP4NA40 STP4NA40FI
s s s s s s s
V DSS 400 V 400 V
R DS( on) < 2Ω < 2Ω
ID 4A 2.8 A
TYPICAL RDS(on) = 1.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTR |
ST Microelectronics |
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Número de pieza | Descripción | Fabricantes | |
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