No | Part number | Description ( Function ) | Manufacturers | |
1 | P3N60FI | MTP3N60FI MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP3N60 MTP3N60FI s s s s s V DSS 600 V 600 V R DS( on) < 2.5 Ω < 2.5 Ω ID 3.9 A 2.5 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 1 2 3 APPLICATIONS s HIGH CUR |
ETC |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to P3N60FI |
Part No | Description ( Function) | Manufacturers | |
FQP3N60 | 600V N-Channel MOSFET FQP3N60 April 2000 QFET FQP3N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minim |
Fairchild Semiconductor |
|
FQP3N60C | N-Channel MOSFET FQP3N60C — N-Channel QFET® MOSFET December 2013 FQP3N60C N-Channel QFET® MOSFET 600 V, 3.0 A, 3.4 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET t |
Fairchild Semiconductor |
|
HGTP3N60A4 | 600V/ SMPS Series N-Channel IGBT HGTD3N60A4S, HGTP3N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET |
Fairchild Semiconductor |
|
HGTP3N60A4 | 600V/ SMPS Series N-Channel IGBT HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 4825 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These dev |
Intersil Corporation |
|
HGTP3N60A4 | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTD3N60A4S, HGTP3N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |