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Datasheet P36NE0 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | P36NE0 | STP36NE0 ( )
®
STP36NE06 STP36NE06FP
N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP STripFET™ POWER MOSFET
TYPE STP36NE06 STP36NE06FP
s s s s s
V DSS 60 V 60 V
R DS(on) < 0.040 Ω < 0.040 Ω
ID 36 A 20 A
TYPICAL RDS(on) = 0.032 Ω EXCEPTIO | ST Microelectronics | data |
2 | P36NE06 | STP36NE06 ( )
®
STP36NE06 STP36NE06FP
N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP STripFET™ POWER MOSFET
TYPE STP36NE06 STP36NE06FP
s s s s s
V DSS 60 V 60 V
R DS(on) < 0.040 Ω < 0.040 Ω
ID 36 A 20 A
TYPICAL RDS(on) = 0.032 Ω EXCEPTIO | ST Microelectronics | data |
P36 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | P3602A | solid state crowbar devices Data Book and Design Guide
TECCOR ELECTRONICS
1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected]
An Invensys company
Teccor Electronics is the proprietor of the SIDACtor®, B Teccor Electronics data | | |
2 | P3602ACMC | solid state crowbar devices Data Book and Design Guide
TECCOR ELECTRONICS
1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected]
An Invensys company
Teccor Electronics is the proprietor of the SIDACtor®, B Teccor Electronics data | | |
3 | P3602Z | solid state crowbar devices Data Book and Design Guide
TECCOR ELECTRONICS
1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected]
An Invensys company
Teccor Electronics is the proprietor of the SIDACtor®, B Teccor Electronics data | | |
4 | P3606BD | N-Channel Enhancement Mode MOSFET P3606BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 36mΩ @VGS = 10V
ID 22A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drai UNIKC mosfet | | |
5 | P3606BK | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P3606BK
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 40mΩ
ID 17A
D
G S
D DDD
#1 S S S G
G. GATE D. DRAIN S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDI NIKO-SEM transistor | | |
6 | P3606HK | Dual N-Channel Enhancement Mode MOSFET P3606HK
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 38mΩ @VGS = 10V
ID 15A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continu UNIKC mosfet | | |
7 | P3606HK | Dual N-Channel Field Effect Transistor NIKO-SEM
Dual N-Channel Enhancement Mode P3606HK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 38mΩ
ID 15A
D1 D1 D2 D2
#1 S1 G1 S2 G2
G. GATE D. DRAIN S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/T NIKO-SEM transistor | |
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Número de pieza | Descripción | Fabricantes | |
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