No | Part number | Description ( Function ) | Manufacturers | |
13 | P3602A | solid state crowbar devices Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, Battrax®, and TeleLink® trademarks. All other brand names may be trademarks of |
Teccor Electronics |
|
12 | P3602ACMC | solid state crowbar devices Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, Battrax®, and TeleLink® trademarks. All other brand names may be trademarks of |
Teccor Electronics |
|
11 | P3602Z | solid state crowbar devices Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: [email protected] An Invensys company Teccor Electronics is the proprietor of the SIDACtor®, Battrax®, and TeleLink® trademarks. All other brand names may be trademarks of |
Teccor Electronics |
|
10 | P3606BD | N-Channel Enhancement Mode MOSFET P3606BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 36mΩ @VGS = 10V ID 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 22 14 45 Avala |
UNIKC |
|
9 | P3606BK | N-Channel Field Effect Transistor NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P3606BK PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 40mΩ ID 17A D G S D DDD #1 S S S G G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre |
NIKO-SEM |
|
8 | P3606HK | Dual N-Channel Enhancement Mode MOSFET P3606HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 38mΩ @VGS = 10V ID 15A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C 15 ID 10 IDM |
UNIKC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |