P2NA60 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | P2NA60 | PJP2NA60 PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features RDS(ON), VGS@10V,ID@1A<4.4Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. 600 V Current 2A (Halogen Free) Mechanical Data Case : TO-251AB ,TO-220AB, ITO-220AB, TO-252 Package Terminals : Solderable per MIL-STD-750, Method 2026 TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams TO-220AB Approx. Weight : 0.065 ounces, 1.859 grams ITO-220AB Approx. Weight : 0.056 ounces, 1.6 grams TO-2 |
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The datasheet is usually used for technical communication to describe technical characteristics of an item or product. |
P2NA Data sheets |
| No | Description ( Function) | Manufacturers | |
| P2NA60 | PJP2NA60 PPJU2NA60 / PJP2NA60 / PJF2NA60 / PJD2NA60 600V N-Channel MOSFET Voltage Features RDS(ON), VGS@10V,ID@1A<4.4Ω High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU |
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| P2NA50FI | STP2NA50FI STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P2NA50 ST P2NA50FI s s s s s s s V DSS 500 V 500 V R DS(o n) <4 Ω <4Ω ID 2. 8 A 2A TYPICAL RDS(on) = 3.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETIT |
 STMicroelectronics |
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