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P2808A1 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
46 P2803BMG
N-Channel Enhancement Mode MOSFET

P2803BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 28mΩ @VGS = 10V ID 6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C VGS ID IDM ±20 6 4 30 Avalanche Current Avalanche Energy Pow

UNIKC
UNIKC
pdf
45 P2803HVG
N-Channel Enhancement Mode MOSFET

P2803HVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 27.5mΩ @VGS = 10V ID 6.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TA = 25 °C TA = 70 °C ID IDM 6.5 5

UNIKC
UNIKC
pdf
44 P2803NVG
N- & P-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 27.5m 34m ID 7A -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current

NIKO-SEM
NIKO-SEM
pdf
43 P2803NVG
N & P-Channel Enhancement Mode MOSFET

P2803NVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 27.5mΩ @VGS = 10V -30V 34mΩ @VGS = -10V ID Channel 7A N -6A P SOP- 08 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TC

UNIKC
UNIKC
pdf
42 P2804BDG
N-Channel Logic Level Enhancement

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28m ID 10A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissip

NIKO-SEM
NIKO-SEM
pdf
41 P2804BDG
N-Channel Enhancement Mode MOSFET

P2804BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS = 10V ID 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 25 16 75 Avalanche Current IAS 26 Avala

UNIKC
UNIKC
pdf



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