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P2003EV PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
5 P2003EV
P-Channel Enhancement Mode MOSFET

P2003EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -9A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -9 -7 -45

UNIKC
UNIKC
pdf
4 P2003EV8
P-Channel Enhancement Mode MOSFET

P2003EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -10 -8

UNIKC
UNIKC
pdf
3 P2003EVG
P-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor D P2003EVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 20m ID -9A G S 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL VDS VGS TC = 25 °C TC = 70 °C ID IDM TC = 25 °C TC = 70 °C PD Tj,

Niko
Niko
pdf
2 P2003EVG
P-Channel Enhancement Mode MOSFET

P2003EVG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -9A SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C

UNIKC
UNIKC
pdf
1 P2003EVT
P-Channel Enhancement Mode MOSFET

P2003EVT P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -9A SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C

UNIKC
UNIKC
pdf



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