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P10NK80ZFP PDF Datasheet

The P10NK80ZFP is Stp10nk80zfp. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 P10NK80ZFP
STP10NK80ZFP

STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP10NK80Z STP10NK80ZFP STW10NK80Z s s s s s s VDSS 800 V 800 V 800 V RDS(on) < 0.90 Ω < 0.90 Ω < 0.90 Ω ID 9A 9A 9A Pw 160 W 40 W 160 W 3 1 2 TYPICAL RDS(on) = 0.78 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHAR

ST Microelectronics
ST Microelectronics
pdf

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Recommended search results related to P10NK80ZFP

Part No Description ( Function) Manufacturers PDF
P10NK80Z   STP10NK80Z

( DataSheet : ) STP10NK80ZFP STP10NK80Z - STW10NK80Z N-CHANNEL 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-Protected SuperMESH™ MOSFET General features Type VDSS RDS(on) ID 9A 9A 9A Pw 160 W 160 W 40 W STW10NK80Z 800 V <0.90 Ω STP10N

ST Microelectronics
ST Microelectronics
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STP10NK80Z   N-CHANNEL Power MOSFET

STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet — production data Features TAB Type STP10NK80Z STP10NK80ZFP STW10NK80Z VDSS 800V 800V 800V RDS(on) <0.90Ω <0.90

ST Microelectronics
ST Microelectronics
datasheet pdf
STP10NK80ZFP   N-CHANNEL Power MOSFET

STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet — production data Features TAB Type STP10NK80Z STP10NK80ZFP STW10NK80Z VDSS 800V 800V 800V RDS(on) <0.90Ω <0.90

ST Microelectronics
ST Microelectronics
datasheet pdf
2SA1080   Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1080 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2530 APPLICATIONS ·Designed for medium power amplifier applicati

Inchange Semiconductor
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2SA1080   Trans GP BJT PNP 90V 0.1A 3-Pin TO-92

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