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Datasheet ODV-065R15B18K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 64 | OD-100 | SUPER HIGH-POWER GaAlAs IR EMITTERS SUPER HIGH-POWER GaAlAs IR EMITTERS
.130 MAX EPOXY .039 .048 .018
OD-100
FEATURES
ANODE (CASE)
.357 .362 .100
• • • • •
Ultra high power output Four wire bonds on die corners Very uniform optical beam Standard 3-lead TO-39 hermetic package Chip size .030 x .030 inches
.031 .014 .018 |
 OPTO DIODE |
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| 63 | OD-24F2 | HIGH-POWER GaAlAs IR EMITTERS HIGH-POWER GaAlAs IR EMITTERS
1.00 MIN. GLASS DOME .015
OD-24F2
FEATURES
ANODE (CASE) .209 .220
• High current capability
• 880nm peak emission for optimum matching with ODD-45W photodiode • Hermetically sealed TO-46 package • Narrow angle of emission
.041
.183 .186 |
 OptoDiode |
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| 62 | OD-24X24-C | HIGH-POWER GaAlAs EMITTER CHIPS HIGH-POWER GaAlAs EMITTER CHIPS
.024 .005
.006 D 2 PLACES
OD-24x24-C
FEATURES • High current capability • 2 bond pads for uniform output
.024
• Gold contacts for high reliability bonding
• High reliability LPE GaAlAs IRLED chips All dimensions are nominal values in i |
OptoDiode |
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| 61 | OD-469L | HIGH OUTPUT BLUE LED HIGH OUTPUT BLUE LED
FEATURES
OD-469L
• Narrow beam angle • Hermetic package
• Convenient TO-39 package with leads
Dimensions are nominal values in inches unless otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 350m |
OPTO DIODE |
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