| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | NT2955 | Power MOSFET ( Transistor ) NTD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and c |
 On Semiconductor |
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0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to NT2955 |
| Part No | Description ( Function) | Manufacturers | |
| 2N2955 | SILICON PNP TRANSISTOR UTC 2N2955 SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 SILICON PNP TRANSISTOR metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25 |
 Unisonic Technologies |
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| 2N2955 | PNP EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD. R 2N2955 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 1.573 Max (39.96) .875(22.23) |
 Dc Components |
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| 2N2955HV | Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N2955HV DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055HV |
 Inchange Semiconductor |
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| 2SK2955 | Silicon N Channel MOS FET High Speed Power Switching 2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–3P D G 1 S 2 3 1. Gate 2. D |
 Hitachi Semiconductor |
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| 2SK2955 | Silicon N Channel MOS FET 2SK2955 Silicon N Channel MOS FET High Speed Power Switching REJ03G1055-0400 (Previous: ADE-208-564B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Packag |
 Renesas |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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